This product is a front side illuminated InGaAs/InP PIN photodiode chip that features a 55μm optical aperture and ground-signal-ground pads. This product has low capacitance,high responsivity, low dark current and excellent reliability, designed for 10Gbps long wavelength optical receiver applications.
The ground-signal-ground pad structure enables direct bonding to any TIA pad layout.The pad metallization is optimized for wire-bonding or flip-chip soldering.

Item	Min	Typ	Max	Unit
Optical window	-	55	-	μm
Bonding pad size	-	75×75	-	μm
Die height	110	120	130	μm
Die length	380	390	400	μm
Die width	365	375	385	μm

• Front illuminated 10 Gbps InGaAs Photodiode.
• 55μm optical aperture window.
• Low capacitance.
• High responsivity.
• Low dark current.
• High reliability satisfying TELCORDIA GR-468-CORE.
• 100% testing and inspection.
• Customized layout dimensions available.
• RoHS compliant.

Parameter	Symbol	Test Condi	Min	Typ	Max	Unit
Forward Current	IF	T=25℃	-	-	10	mA
Revers Current	IR	T=25℃	-	-	5	mA
Storage Temperature	Tstg	-	-40	-	125	℃
Operating Temperature	Top	-	-40	-	80	℃
Responsivity	Re	@1310nm	0.8	0.9	-	A/W
Dark Current	Id	-5V	-	1	3	nA
Bandwidth	BW	-2V	-	10	-	GHz
Wavelength range	λ	-	920	1310/1550	1600	nm
Breakdown Voltage	VBR	10μA	30	-	-	V
Capacitance	Cj	-2V, 1MHz	-	0.2	-	pF

• Products are ESD sensitive. Implementing measures against ESD is required.
• Products are highly fragile. Do not use tweezers to handle the products. Vac-sorb is highly recommended.
• Products should be soldered with well selected and controlled temperature and
  pressure to avoid the permanent damages.