Low background concentration of i-InGaAs
absorption layer (<1E15 cm^-3 ). Low particle and
defect densities on wafer surface. Low dark
current in device performance. Grown on n-type or
Semi Insulating substrates are all available.
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Two- or three-inch epiwafers grown by MOVPE
(MOCVD) are available for 808 nm laser diode (LD)
fabrication with AlGaAs quantum well as the
active layer. The slope efficiency for fabricated
laser can be larger than 1 W/A.
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