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808 nm LD Epi Wafer
Description
Two- or three-inch epiwafers grown by MOVPE (MOCVD) are available for 808 nm laser diode (LD) fabrication with AlGaAs quantum well as the active layer. The slope efficiency for fabricated laser can be larger than 1 W/A. Good uniformity of wavelength around 3-inch wafer can be achieved. Matrixepi also provides 915 nm and 980 nm laser diode epiwafers and customized laser diode epiwafers.
Wafer Characterization
The epiwafers are characterized by PL and HRXRD tests..
This is a typical XRD rocking curve of AlGaAs material for cladding layer.
This is a typical PL spectrum of an 808 nm LD epiwafer with a 13nm FWHM.
This is a typical PL MAPPING of an 808 nm LD epiwafer with a 0.6 nm Std deviation across the inner 65 mm diameter area.
