MATRIXEPI|Epitaxy|GaAs|Epi Wafer

Description

Excellent within wafer, wafer-to-wafer uniformities and batch-to-batch consistency up to 3-inch including material composition, layer thickness and doping concentration.Grown on n-type or Semi Insulating substrates are all available. Customized structures are available.

EPIWafer Characterization

Epiwafers are characterized by XRD, PL and E-CV tests.

This is a typical XRD rocking curve.The lattice match can be controlled within 500ppm variation across a 3-inch wafer.

This is a typical E-CV curve shows the carrier concentration depth profile from InGaAs(P⁺)/InGaAs(i)/InP(buffer)/InP(Sub) layers. The background concentration of Intrinsic InGaAs material is usually lower than 1E15 cm^-3.

This is a typical PL spectrum of an InGaAs/InP PD epiwafer with a 1nm Std deviation across the inner 65mm diameter area.